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| DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * High power gain * Gold metallization ensures excellent reliability * SOT416 (SC-75) package. APPLICATIONS Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts 75 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz f = 2 GHz F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt - - - - 13 8 1.5 - open base CONDITIONS open emitter MIN. - - - - 40 - 4 TYP. - - - - 90 0.6 5 base emitter collector DESCRIPTION Marking code: R2. fpage BFR93AT 3 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 15 12 35 150 - - - - - - 150 UNIT V V mA mW pF GHz dB dB dB C 2000 Mar 09 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature Ts 75 C; see Fig.2 CONDITION open emitter open base open collector MIN. - - - - - -65 - BFR93AT MAX. 15 12 2 35 150 +150 150 UNIT V V V mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 500 UNIT K/W 200 Ptot (mW) 150 MGU068 100 50 0 0 50 100 150 Ts (C) 200 Fig.2 Power derating curve. 2000 Mar 09 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS IE = 0; VCB = 5 V IC = 30 mA; VCE = 5 V IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; note 1; f = 1 GHz f = 2 GHz F noise figure IC = 5 mA; VCE = 8 V; s = opt; f = 1 GHz f = 2 GHz Note - - 1.5 2.1 - - 13 8 MIN. - 40 - - - 4 TYP. - 90 0.7 2.3 0.6 5 BFR93AT MAX. 50 - - - - - UNIT nA pF pF pF GHz - - - - dB dB dB dB S 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ---------------------------------------------------------- dB ( 1 - S 11 2 ) ( 1 - S 22 2 ) 2000 Mar 09 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT handbook, halfpage 120 MCD087 1 Cre (pF) 0.8 MBG203 h FE 80 0.6 0.4 40 0.2 0 0 10 20 IC (mA) 30 0 0 4 8 12 VCB (V) 16 VCE = 5 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 6 fT (GHz) 4 MBG204 2 0 1 10 IC (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current; typical values. 2000 Mar 09 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 30 gain (dB) MSG 20 GUM MBG202 30 gain (dB) 20 MSG MBG201 10 10 GUM 0 0 10 20 IC (mA) 30 0 0 10 20 IC (mA) 30 VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MBG200 handbook, halfpage 50 MBG207 gain (dB) 40 GUM gain (dB) 40 GUM 30 MSG 30 MSG 20 20 10 Gmax 0 10 10 2 10 Gmax 0 10 3 4 f (MHz) 10 10 102 103 f (MHz) 104 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 2000 Mar 09 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT handbook, halfpage 6 MGC901 handbook, halfpage 6 MGC900 F (dB) 4 F (dB) 4 f = 2 GHz IC = 30 mA 1 GHz 2 500 MHz 2 10 mA 5 mA 0 1 10 IC (mA) 10 2 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of collector current; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 5 0o 0 0.2 F min = 1.4 dB opt 0.2 0.5 1 2 5 180 o 0 0.2 F = 2 dB F = 3 dB 0.5 F = 4 dB 1 5 135 o 2 45 o MGC879 1.0 90 o f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 . Fig.12 Common emitter noise figure circles; typical values. 2000 Mar 09 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 2 5 0o 0 0.2 G max = 13.8 dB ms 180 o 0 0.2 G = 13 dB 5 F min = 2 dB opt 0.5 1 F = 2.5 dB 0.2 G = 12 dB G = 11 dB F = 3 dB F = 4 dB 0.5 135 o 1 MGC880 5 2 45 o 1.0 90 o f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 . Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 (4) (3) 180 o 0 0.2 (5) (2) 0.5 (1) 5 (6) (7) (8) 0.5 135 o 1 MGC881 0.2 5 0.4 0.2 1 2 5 0o 0 (1) opt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) ms; Gmax = 8.1 dB. (6) G = 7 dB. (7) G = 6 dB. (8) G = 5 dB. f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 . 0.2 2 45 o 1.0 90 o Fig.14 Common emitter noise figure circles; typical values. 2000 Mar 09 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT handbook, full pagewidth 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 3 GHz 5 40 MHz 0.2 5 0.5 135 o 1 2 45 o MGC878 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 180 o 40 MHz 50 40 30 20 10 3 GHz 0o 135 o 45 o 90 o VCE = 8 V; IC = 30 mA. MGC898 Fig.16 Common emitter forward transmission coefficient (S21); typical values. 2000 Mar 09 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 40 MHz 0.5 0.4 0.3 0.2 0.1 0o 135 o 45 o 90 o VCE = 8 V; IC = 30 mA. MGC899 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0.2 3 GHz 5 0o 0 0.2 5 0.5 135 o 1 2 45 o MGC877 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (S22); typical values. 2000 Mar 09 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFR93AT SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 Mar 09 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFR93AT This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Mar 09 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFR93AT 2000 Mar 09 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFR93AT 2000 Mar 09 14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFR93AT 2000 Mar 09 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 69 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603508/02/pp16 Date of release: 2000 Mar 09 Document order number: 9397 750 06718 |
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